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| Power Transistor Array STA415A Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 355 365 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 25% Unit V V V A mA W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 0.2 0.2 9.0 0.2 (Ta=25C) Unit A mA V V V V k mJ External Dimensions STA4 (LF412) 25.25 0.2 b a 11.3 3.5 0.5 2.3 1.0 0.25 0.5 0.15 (2.54) 0 0.3 0 0.3 9 * 2.54=22.86 0.05 0.15 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5 1 2 3 4 5 6 7 8 9 10 EBCBCBCBCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 30m A s VCE (sat) -- IB Temperature Characteristics 0.5 8mA 5mA (IC = 0.5A) s VCE (sat) -- IC Temperature Characteristics 3 IC/IB = 100 3 12 A m VCE(sat) (V) IC (A) 3mA 2mA VCE(sat) (V) 2 2 Ta = 125C 75C 25C -40C 0.25 1 IB = 1mA Ta = 125C 75C 25C -40C 1 0 0 0 1 2 3 4 5 6 1 10 100 400 0 0 0.5 1 0.5 1.2 4.0 L = 10mH, single pulse C1.5 0.5 0.2 0.2 5 VCE (V) IB (mA) IC (A) s hFE -- IC Temperature Characteristics 3000 (VCE = 4V) s ton*tstg*tf -- IC Characteristics (typ.) 50 s j-a -- t Characteristics Single pulse 20 ton*tstg*tf (S) hFE 500 Ta = 125C 75C 25C -40C 5 tf 1 0.5 0.1 (C/W) j-a 1000 10 tstg VCC = 12V IB = 5mA -IB = 0A 10 5 ton 100 50 0.01 0.1 1 0 0.5 1.0 1.5 2.0 1 10 100 1000 0.5 1 4 IC (A) Ic (A) t (ms) s Safe Operating Area (single pulse) 5 (per element) s PT -- Ta Derating 20 Equivalent Circuit Diagram 1m s 10 m s W ith PT (W) IC (A) 1 0.5 3 he at 5 7 9 in fin ite 10 2 1 RB RBE 4 6 8 si nk 10 Without heatsink natural air cooling With out h eatsin k 0.1 1 5 10 50 0 0 50 100 150 VCE (V) Ta (C) 64 |
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